Invention Grant
- Patent Title: Method and device for wafer-level testing
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Application No.: US17809577Application Date: 2022-06-29
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Publication No.: US11754621B2Publication Date: 2023-09-12
- Inventor: Jun He , Yu-Ting Lin , Wei-Hsun Lin , Yung-Liang Kuo , Yinlung Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/26

Abstract:
The present disclosure provides a method and a system for testing semiconductor device. The method includes providing a device under test (DUT) having an input terminal and an output terminal; applying a voltage having a first voltage level to the input terminal of the DUT during a first period; applying a stress signal to the input terminal of the DUT during a second period subsequent to the first period; obtaining an output signal in response to the stress signal at the output terminal of the DUT; and comparing the output signal with the stress signal. The stress signal includes a plurality of sequences, each having a ramp-up stage and a ramp-down stage. The stress signal has a second voltage level and a third voltage level.
Public/Granted literature
- US20220326300A1 METHOD AND DEVICE FOR WAFER-LEVEL TESTING Public/Granted day:2022-10-13
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