Invention Grant
- Patent Title: Hybrid manufacturing of microeletronic assemblies with first and second integrated circuit structures
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Application No.: US17114537Application Date: 2020-12-08
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Publication No.: US11756886B2Publication Date: 2023-09-12
- Inventor: Wilfred Gomes , Abhishek A. Sharma , Mauro J. Kobrinsky , Doug B. Ingerly
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H01L25/18 ; H01L23/00 ; H01L23/48 ; H01L23/532

Abstract:
Microelectronic assemblies fabricated using hybrid manufacturing, as well as related devices and methods, are disclosed herein. As used herein, “hybrid manufacturing” refers to fabricating a microelectronic assembly by arranging together at least two IC structures fabricated by different manufacturers, using different materials, or different manufacturing techniques. For example, a microelectronic assembly may include a first IC structure that includes first interconnects and a second IC structure that includes second interconnects, where at least some of the first and second interconnects may include a liner and an electrically conductive fill material, and where a material composition of the liner/electrically conductive fill material of the first interconnects may be different from a material composition of the liner/electrically conductive fill material of the second interconnects.
Public/Granted literature
- US20220181256A1 HYBRID MANUFACTURING FOR INTEGRATED CIRCUIT DEVICES AND ASSEMBLIES Public/Granted day:2022-06-09
Information query
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