- 专利标题： Semiconductor memory device
-
申请号： US17120341申请日： 2020-12-14
-
公开(公告)号： US11756898B2公开(公告)日： 2023-09-12
- 发明人: Hideki Itai , Mitsuhiro Noguchi , Hiromasa Yoshimori , Hideyuki Tabata , Yasushi Nakajima
- 申请人： KIOXIA CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： KIOXIA CORPORATION
- 当前专利权人： KIOXIA CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP 20116116 2020.07.06
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L23/00 ; H01L23/522 ; H10B41/10 ; H10B41/27 ; H10B41/41 ; H10B43/10 ; H10B43/27 ; H10B43/40
摘要：
A semiconductor memory device includes: two memory blocks; a first structure disposed between the two memory blocks; and a second structure separated from the two memory blocks, or a plurality of second structures. The two memory blocks include a plurality of first conductive layers and a plurality of first insulating layers alternately arranged. The first structure has one end, and the one end is closer to the substrate than the plurality of first conductive layers are. The second structure has one end, and the one end is closer to the substrate than at least apart of the first conductive layers among the plurality of first conductive layers is. Another end of the first structure and another end of the second structure are farther from the substrate than the plurality of first conductive layers are. The second structure is separated from the first structure.
公开/授权文献
- US20220005767A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2022-01-06
信息查询
IPC分类:
