公开(公告)号：US11756898B2

公开(公告)日：2023-09-12

申请号：US17120341

申请日：2020-12-14

申请人： KIOXIA CORPORATION

发明人： Hideki Itai ,  Mitsuhiro Noguchi ,  Hiromasa Yoshimori ,  Hideyuki Tabata ,  Yasushi Nakajima

IPC分类号： H01L27/11582 ,  H01L23/00 ,  H01L23/522 ,  H10B41/10 ,  H10B41/27 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

CPC分类号： H01L23/562 ,  H01L23/5226 ,  H10B41/10 ,  H10B41/27 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

摘要： A semiconductor memory device includes: two memory blocks; a first structure disposed between the two memory blocks; and a second structure separated from the two memory blocks, or a plurality of second structures. The two memory blocks include a plurality of first conductive layers and a plurality of first insulating layers alternately arranged. The first structure has one end, and the one end is closer to the substrate than the plurality of first conductive layers are. The second structure has one end, and the one end is closer to the substrate than at least apart of the first conductive layers among the plurality of first conductive layers is. Another end of the first structure and another end of the second structure are farther from the substrate than the plurality of first conductive layers are. The second structure is separated from the first structure.