Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17120341Application Date: 2020-12-14
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Publication No.: US11756898B2Publication Date: 2023-09-12
- Inventor: Hideki Itai , Mitsuhiro Noguchi , Hiromasa Yoshimori , Hideyuki Tabata , Yasushi Nakajima
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20116116 2020.07.06
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/00 ; H01L23/522 ; H10B41/10 ; H10B41/27 ; H10B41/41 ; H10B43/10 ; H10B43/27 ; H10B43/40

Abstract:
A semiconductor memory device includes: two memory blocks; a first structure disposed between the two memory blocks; and a second structure separated from the two memory blocks, or a plurality of second structures. The two memory blocks include a plurality of first conductive layers and a plurality of first insulating layers alternately arranged. The first structure has one end, and the one end is closer to the substrate than the plurality of first conductive layers are. The second structure has one end, and the one end is closer to the substrate than at least apart of the first conductive layers among the plurality of first conductive layers is. Another end of the first structure and another end of the second structure are farther from the substrate than the plurality of first conductive layers are. The second structure is separated from the first structure.
Public/Granted literature
- US20220005767A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-01-06
Information query
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