Invention Grant
- Patent Title: Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance
-
Application No.: US17111427Application Date: 2020-12-03
-
Publication No.: US11757025B2Publication Date: 2023-09-12
- Inventor: Jenn-Gwo Hwu , Chien-Shun Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. , National Taiwan University
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/51 ; H01L29/45 ; H01L29/49 ; H01L29/06 ; H01L21/28 ; H01L29/66 ; H01L29/423 ; H01L21/265
Abstract:
Gated MIS tunnel diode devices having a controllable negative transconductance behavior are provided. In some embodiments, a device includes a substrate, a tunnel diode dielectric layer on a surface of the substrate, and a gate dielectric layer on the surface of the substrate and adjacent to the tunnel diode dielectric layer. A tunnel diode electrode is disposed on the tunnel diode dielectric layer, and a gate electrode is disposed on the gate dielectric layer. A substrate electrode is disposed on the surface of the substrate, and the tunnel diode electrode is positioned between the gate electrode and the substrate electrode.
Public/Granted literature
- US20210119025A1 GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE Public/Granted day:2021-04-22
Information query
IPC分类:
