Invention Grant
- Patent Title: Memory devices including an operation mode supporting virtual bank calculation, and operating methods of the memory devices
-
Application No.: US17475479Application Date: 2021-09-15
-
Publication No.: US11763876B2Publication Date: 2023-09-19
- Inventor: Sang-Hyuk Kwon , Nam Sung Kim , Kyomin Sohn , Seongil O , Haesuk Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20200004421 2020.01.13
- Main IPC: G11C8/12
- IPC: G11C8/12 ; G11C11/408 ; G11C11/4074 ; G11C11/4096 ; G11C11/4094 ; G11C7/10 ; G11C11/406 ; G11C11/4076

Abstract:
A memory device includes a memory cell array including a plurality of banks each including a plurality of memory cells connected to a plurality of word lines, and a row decoder block connected to the plurality of banks. In a first operation mode, the row decoder block receives a first row address and a first bank address together with an activation command and activates a word line selected by the first row address from among the plurality of word lines of a bank selected by the first bank address from among the plurality of banks. In a second operation mode, the row decoder block receives a second row address and a second bank address together with the activation command and activates a word line selected by the second row address from among the plurality of word lines of each of at least two banks of the plurality of banks.
Public/Granted literature
- US20210407577A1 MEMORY DEVICES, MEMORY MODULES, AND OPERATING METHODS OF MEMORY DEVICES Public/Granted day:2021-12-30
Information query