- 专利标题: Nonvolatile memory device including artificial neural network, memory system including same, and operating method of nonvolatile memory device including artificial neural network
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申请号: US17498832申请日: 2021-10-12
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公开(公告)号: US11763903B2公开(公告)日: 2023-09-19
- 发明人: Sehwan Park , Jinyoung Kim , Youngdeok Seo , Dongmin Shin
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Fish & Richardson P.C.
- 优先权: KR 20210008917 2021.01.21
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C7/10 ; G11C11/54 ; G11C16/04 ; G11C16/10 ; G11C16/14 ; G11C16/26
摘要:
A nonvolatile memory device includes; a memory cell array including a meta data region storing chip-level information, control logic identifying a target cell in response to a command, machine learning (ML) logic inferring an optimum parameter based on the chip-level information and physical information associated with the target cell applied as inputs to an artificial neural network model, and a buffer memory configured to store weight parameters of the artificial neural network model.
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