- Patent Title: Nonvolatile memory device including artificial neural network, memory system including same, and operating method of nonvolatile memory device including artificial neural network
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Application No.: US17498832Application Date: 2021-10-12
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Publication No.: US11763903B2Publication Date: 2023-09-19
- Inventor: Sehwan Park , Jinyoung Kim , Youngdeok Seo , Dongmin Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Fish & Richardson P.C.
- Priority: KR 20210008917 2021.01.21
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C7/10 ; G11C11/54 ; G11C16/04 ; G11C16/10 ; G11C16/14 ; G11C16/26

Abstract:
A nonvolatile memory device includes; a memory cell array including a meta data region storing chip-level information, control logic identifying a target cell in response to a command, machine learning (ML) logic inferring an optimum parameter based on the chip-level information and physical information associated with the target cell applied as inputs to an artificial neural network model, and a buffer memory configured to store weight parameters of the artificial neural network model.
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