Invention Grant
- Patent Title: Magnetic tunnel junction element with a robust reference layer
-
Application No.: US17149750Application Date: 2021-01-15
-
Publication No.: US11763972B2Publication Date: 2023-09-19
- Inventor: Qinli Ma , Youngsuk Choi , Shu-Jen Han
- Applicant: HeFeChip Corporation Limited
- Applicant Address: HK Sai Ying Pun
- Assignee: HeFeChip Corporation Limited
- Current Assignee: HeFeChip Corporation Limited
- Current Assignee Address: HK Sai Ying Pun
- Agent Winston Hsu
- Main IPC: H01F10/32
- IPC: H01F10/32 ; G11C11/16 ; G01R33/09 ; H10B61/00 ; H10N50/10 ; H10N50/80 ; H10N50/85
Abstract:
A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a first spacer layer adjacent to the second pinned layer, a second spacer layer, a ferromagnetic layer sandwiched by the first spacer layer and the second spacer layer, a polarization enhancement layer adjacent to the second spacer layer.
Public/Granted literature
- US20210134504A1 MAGNETIC TUNNEL JUNCTION ELEMENT WITH A ROBUST REFERENCE LAYER Public/Granted day:2021-05-06
Information query
