Invention Grant
- Patent Title: Plasma processing apparatus, electrostatic attraction method, and electrostatic attraction program
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Application No.: US16952875Application Date: 2020-11-19
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Publication No.: US11764038B2Publication Date: 2023-09-19
- Inventor: Shoichiro Matsuyama , Naoki Tamaru , Yasuharu Sasaki
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: WEIHROUCH IP
- Priority: JP 17110452 2017.06.02
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/687 ; H01L21/683

Abstract:
A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.
Public/Granted literature
- US20210074522A1 PLASMA PROCESSING APPARATUS, ELECTROSTATIC ATTRACTION METHOD, AND ELECTROSTATIC ATTRACTION PROGRAM Public/Granted day:2021-03-11
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