- 专利标题： Increasing contact areas of contacts for MIM capacitors
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申请号： US16900289申请日： 2020-06-12
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公开(公告)号： US11764143B2公开(公告)日： 2023-09-19
- 发明人: Yao-Te Huang , Yung-Shih Cheng
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L23/64 ; H01L21/768 ; H01L21/308 ; H01L49/02
摘要：
A method includes forming a first electrode layer having a first opening, with the first opening having a first lateral dimension, forming a first capacitor insulator over the first electrode layer, and forming a second electrode layer over the first capacitor insulator, with the second electrode layer having a second opening. The first opening is directly underlying the second opening. The second opening has a second lateral dimension greater than the first lateral dimension. The method further includes depositing a dielectric layer over the second electrode layer, and forming a contact opening, which comprises a first portion including the first opening, and a second portion including the second opening. A conductive plug is formed in the contact opening.
公开/授权文献
- US20210391248A1 Increasing Contact Areas of Contacts for MIM Capacitors 公开/授权日：2021-12-16
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