Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17900898Application Date: 2022-09-01
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Publication No.: US11765982B2Publication Date: 2023-09-19
- Inventor: Ching-Wen Hung , Ya-Sheng Feng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1811286628.7 2018.10.31
- The original application number of the division: US16207206 2018.12.03
- Main IPC: H10N50/80
- IPC: H10N50/80 ; H01L21/768 ; H10N50/01

Abstract:
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; and removing the sacrificial layer.
Public/Granted literature
- US20220416153A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-12-29
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