Invention Grant
- Patent Title: Power device structures and methods of making
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Application No.: US17572963Application Date: 2022-01-11
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Publication No.: US11769665B2Publication Date: 2023-09-26
- Inventor: Amirhasan Nourbakhsh , Raman Gaire , Tyler Sherwood , Lan Yu , Roger Quon , Siddarth Krishnan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
Exemplary semiconductor processing methods may include forming a p-type silicon-containing material on a substrate including a first n-type silicon-containing material defining one or more features. The p-type silicon-containing material may extend along at least a portion of the one or more features defined in the first n-type silicon-containing material. The methods may include removing a portion of the p-type silicon-containing material. The portion of the p-type silicon-containing material may be removed from a bottom of the one or more features. The methods may include providing a silicon-containing material. The methods may include depositing a second n-type silicon-containing material on the substrate. The second n-type silicon-containing material may fill the one or more features formed in the first n-type silicon-containing material and may separate regions of remaining p-type silicon-containing material.
Public/Granted literature
- US20230223256A1 POWER DEVICE STRUCTURES AND METHODS OF MAKING Public/Granted day:2023-07-13
Information query
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