Invention Grant
- Patent Title: Half-bridge circuit using separately packaged GaN power devices
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Application No.: US18064209Application Date: 2022-12-09
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Publication No.: US11770010B2Publication Date: 2023-09-26
- Inventor: Daniel M. Kinzer , Santosh Sharma , Ju Jason Zhang
- Applicant: Navitas Semiconductor Limited
- Applicant Address: IE Dublin
- Assignee: Navitas Semiconductor Limited
- Current Assignee: Navitas Semiconductor Limited
- Current Assignee Address: IE Dublin
- Agency: Kilpatrick Townsend & Stockton LLP
- The original application number of the division: US16151695 2018.10.04
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H02J7/00 ; H01L23/495 ; H01L27/02 ; H01L23/62 ; H02M1/088 ; H03K3/012 ; H01L29/20 ; H03K17/10 ; H03K19/0185 ; H01L25/07 ; H02M3/157 ; H03K3/356 ; H01L27/088 ; H01L23/528 ; H01L29/10 ; H01L29/40 ; H01L29/417 ; H02M1/00 ; H02M3/155
Abstract:
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
Public/Granted literature
- US20230111993A1 HALF-BRIDGE CIRCUIT USING SEPARATELY PACKAGED GAN POWER DEVICES Public/Granted day:2023-04-13
Information query
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