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    Circuits and methods for controlling a voltage of a semiconductor substrate
    2.
    发明授权
    Circuits and methods for controlling a voltage of a semiconductor substrate 有权

    公开(公告)号：US12057824B2

    公开(公告)日：2024-08-06

    申请号：US17850792

    申请日：2022-06-27

    申请人： Navitas Semiconductor Limited

    发明人： Santosh Sharma ,  Daniel M. Kinzer ,  Ren Huei Tzeng

    IPC分类号： H03K17/082 ,  G05F3/26 ,  H01L29/20 ,  H03K17/687

    CPC分类号： H03K17/0822 ,  G05F3/262 ,  H01L29/2003 ,  H03K17/6871

    摘要： An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.

    TRANSISTOR DV/DT CONTROL CIRCUIT
    5.
    发明申请
    TRANSISTOR DV/DT CONTROL CIRCUIT 有权

    公开(公告)号：US20230006657A1

    公开(公告)日：2023-01-05

    申请号：US17853740

    申请日：2022-06-29

    申请人： Navitas Semiconductor Limited

    发明人： Hongwei Jia ,  Santosh Sharma ,  Daniel M. Kinzer ,  Victor Sinow ,  Matthew Anthony Topp

    IPC分类号： H03K3/012

    摘要： Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.

    Integrated Half-Bridge Power Converter
    7.
    发明申请
    Integrated Half-Bridge Power Converter 有权

    公开(公告)号：US20220084978A1

    公开(公告)日：2022-03-17

    申请号：US17169320

    申请日：2021-02-05

    申请人： NAVITAS SEMICONDUCTOR LIMITED

    发明人： Daniel M. Kinzer ,  Jason Zhang ,  Thomas Ribarich

    IPC分类号： H01L23/00 ,  H02M7/219 ,  H01L29/20 ,  H01L25/18 ,  H01L23/495

    摘要： An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.