- 专利标题: MXene layers as substrates for growth of highly oriented perovskite thin films
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申请号: US16756337申请日: 2018-10-09
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公开(公告)号: US11773480B2公开(公告)日: 2023-10-03
- 发明人: Zongquan Gu , Babak Anasori , Andrew Lewis Bennett-Jackson , Matthias Falmbigl , Dominic Imbrenda , Yury Gogotsi , Jonathan E. Spanier
- 申请人: Drexel University
- 申请人地址: US PA Philadelphia
- 专利权人: Drexel University
- 当前专利权人: Drexel University
- 当前专利权人地址: US PA Philadelphia
- 代理机构: BakerHostetler
- 国际申请: PCT/US2018/054955 2018.10.09
- 国际公布: WO2019/079062A 2019.04.25
- 进入国家日期: 2020-04-15
- 主分类号: C23C14/58
- IPC分类号: C23C14/58 ; C23C16/455 ; C23C16/56 ; C04B35/468 ; H01L21/02 ; C23C14/08 ; C23C14/02 ; C23C14/06 ; C23C16/02 ; C23C16/32 ; C23C16/40 ; H01L49/02
摘要:
The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).
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