Invention Grant
- Patent Title: Memory device with in-memory searching array and operation method thereof for implementing finite state machine
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Application No.: US17520749Application Date: 2021-11-08
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Publication No.: US11776618B2Publication Date: 2023-10-03
- Inventor: Po-Hao Tseng
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C11/4093 ; G11C11/4096 ; G11C11/4072 ; G11C11/4074 ; G11C11/408 ; G11C16/00 ; G11C15/04

Abstract:
The present invention discloses a memory device and operation method thereof. The operation method comprises: programming a plurality of first strings of a plurality of string pairs representing a finite state machine (FSM) to an in-memory-searching (IMS) array of a memory device; programming a plurality of second strings of the string pairs to a working memory of the memory device; and programming a string representing a starting state of the FSM to a buffer of the memory device.
Public/Granted literature
- US20230145303A1 MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2023-05-11
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