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    Content-addressable memory and analog content-addressable memory device
    1.
    发明授权
    Content-addressable memory and analog content-addressable memory device 有权

    公开(公告)号：US12159673B2

    公开(公告)日：2024-12-03

    申请号：US18354706

    申请日：2023-07-19

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Po-Hao Tseng ,  Feng-Min Lee ,  Ming-Hsiu Lee

    IPC: G11C15/00 ,  G11C15/04

    Abstract: A memory cell for an analog content-addressable memory is provided. The memory cell includes an N-type transistor, a P-type transistor, and a current control circuit. The gate of the N-type transistor is configured to receive a first input signal. The gate of the P-type transistor is configured to receive a second input signal. The current control circuit is coupled to at least one of the N-type transistor and the P-type transistor. The current control circuit is configured to generate at least one passing current. When the input voltages of the first input signal and the second input signal are within a matching range, the N-type transistor and the P-type transistor are turned on, and the passing current is substantially a fixed current value. The matching range is related to the threshold voltages of the N-type transistor and the P-type transistor, and the fixed current value.

    In-dynamic memory search device and operation method thereof
    2.
    发明授权
    In-dynamic memory search device and operation method thereof 有权

    公开(公告)号：US12159671B2

    公开(公告)日：2024-12-03

    申请号：US18164657

    申请日：2023-02-06

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Po-Hao Tseng ,  Feng-Min Lee ,  Yu-Hsuan Lin

    IPC: G11C15/04

    Abstract: An in-dynamic memory search device and an operation method thereof are provided. The in-dynamic memory search device includes at least one word line, at least two bit lines, at least one match line, at least one unit cell, at least two search lines, at least one pre-charge unit and at least one sense unit. The unit cell includes two storage elements and two search transistors. Each of the storage elements includes a write transistor and a read transistor. The write transistor is connected to the word line and one of the bit lines. The read transistor is connected to the write transistor and the match line. The search transistors are respectively connected to the read transistors. The search lines are respectively connected to the search transistors. The pre-charge unit is connected to the match line. The sense unit is connected to the match line.

    Memory device with high content density
    3.
    发明授权
    Memory device with high content density 有权

    公开(公告)号：US12057179B2

    公开(公告)日：2024-08-06

    申请号：US17686469

    申请日：2022-03-04

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Po-Hao Tseng

    IPC: G11C16/34 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

    CPC classification number: G11C16/3404 ,  G11C16/08 ,  G11C16/102 ,  G11C16/26 ,  G11C16/30

    Abstract: A memory device, which includes a first driving circuit, a second driving circuit, a sensing circuit and an in-memory search (IMS) array. Memory units of the in-memory search array are arranged as a plurality of horizontal rows and vertical columns. Control terminal of each the memory unit in the same vertical column is coupled to the first driving circuit through a word line. The memory units of the same vertical column are connected in series and coupled to the second driving circuit through a bit line, and coupled to the sensing circuit through a source line. Every 2N adjacent memory units in the same vertical column are arranged as a memory unit to store an encoded data of 2N bits corresponding to an original data of M bits, where N and M are positive integers, and N is greater than or equal to two.

    IMS memory cell, IMS method and IMS memory device
    9.
    发明授权
    IMS memory cell, IMS method and IMS memory device 有权

    公开(公告)号：US12283343B2

    公开(公告)日：2025-04-22

    申请号：US18064303

    申请日：2022-12-12

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Yun-Yuan Wang ,  Cheng-Hsien Lu ,  Po-Hao Tseng ,  Ming-Hsiu Lee

    IPC: G11C7/10 ,  G11C7/14 ,  G11C8/08

    Abstract: The disclosure provides an in-memory search (IMS) memory cell, an IMS method and an IMS memory device. The IMS method comprises: encoding a search data and a storage data by a first IMS encoding into a first IMS encoded search data and a first IMS encoded storage data; encoding the first IMS encoded search data by a second IMS encoding into a plurality of search voltages; encoding the first IMS encoded storage data by the second IMS encoding into a plurality of threshold voltages of a plurality of memory cells of a plurality IMS memory cells of the IMS memory device; and searching the IMS memory cells by the search voltages to generate a search result.

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