Invention Grant
- Patent Title: Threshold voltage based on program/erase cycles
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Application No.: US16995517Application Date: 2020-08-17
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Publication No.: US11776629B2Publication Date: 2023-10-03
- Inventor: Niccolo' Righetti , Kishore K. Muchherla , Jeffrey S. McNeil, Jr. , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/14

Abstract:
A method includes during a first portion of a service life of a memory device, programming at least one memory cell of the memory device to a first threshold voltage corresponding to a desired data state. The method can include during a second portion of the service life of the memory device subsequent to the first portion of the service life of the memory device, programming at least one memory cell of the memory device to a second threshold voltage corresponding to the desired data state. The second threshold voltage can be different than the first threshold voltage.
Public/Granted literature
- US1263551A Rail-clamp. Public/Granted day:1918-04-23
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