Invention Grant
- Patent Title: Plasma processing apparatus and power supply control method
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Application No.: US16393319Application Date: 2019-04-24
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Publication No.: US11776795B2Publication Date: 2023-10-03
- Inventor: Koichi Nagami , Tatsuro Ohshita
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: WEIHROUCH IP
- Priority: JP 18087194 2018.04.27
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/683 ; H01L21/67

Abstract:
A plasma processing apparatus includes: a placement table serving as a lower electrode and configured to place thereon a workpiece to be subjected to a plasma processing; a DC power supply configured to alternately generate a positive DC voltage and a negative DC voltage to be applied to the placement table; and a controller configured to control an overall operation of the plasma processing apparatus. The controller is configured to: measure a voltage of the workpiece placed on the placement table; calculate, based on the measured voltage of the workpiece, a potential difference between the placement table and the workpiece in a period during which the negative DC voltage is applied to the placement table; and control the DC power supply such that a value of the negative DC voltage applied to the placement table is shifted by a shift amount that decreases the calculated potential difference.
Public/Granted literature
- US20190333744A1 PLASMA PROCESSING APPARATUS AND POWER SUPPLY CONTROL METHOD Public/Granted day:2019-10-31
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