Invention Grant
- Patent Title: Logic circuit and semiconductor device formed using unipolar transistor
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Application No.: US17441804Application Date: 2020-03-12
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Publication No.: US11777502B2Publication Date: 2023-10-03
- Inventor: Hiroki Inoue , Munehiro Kozuma , Takeshi Aoki , Shuji Fukai , Fumika Akasawa , Sho Nagao
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP 19066785 2019.03.29
- International Application: PCT/IB2020/052186 2020.03.12
- International Announcement: WO2020/201860A 2020.10.08
- Date entered country: 2021-09-22
- Main IPC: H03K19/08
- IPC: H03K19/08 ; H03K17/56 ; H01L27/12 ; H01L27/13

Abstract:
A semiconductor device is provided; the semiconductor device includes unipolar transistors. A steady-state current does not flow in the semiconductor device. The semiconductor device uses a high-level potential and a low-level potential to express a high level and a low level, respectively. The semiconductor device includes unipolar transistors, a capacitor, first and second input terminals, and an output terminal. To the second input terminal, a signal is input whose logic is inverted from the logic of a signal input to the first input terminal. The semiconductor device has a circuit structure called bootstrap in which two unipolar transistors are connected in series between the high-level potential and the low-level potential and a capacitor is provided between an output terminal and a gate of one of the two transistors. A delay is caused between the gate of the transistor and the signal output from the output terminal, whereby the bootstrap can be certainly performed.
Public/Granted literature
- US20220173737A1 Logic Circuit and Semiconductor Device Formed Using Unipolar Transistor Public/Granted day:2022-06-02
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