Invention Grant
- Patent Title: Defect free germanium oxide gap fill
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Application No.: US17119648Application Date: 2020-12-11
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Publication No.: US11781218B2Publication Date: 2023-10-10
- Inventor: Huiyuan Wang , Susmit Singha Roy , Takehito Koshizawa , Bo Qi , Abhijit Basu Mallick
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/40
- IPC: C23C16/40 ; H01L21/768 ; H01L21/311 ; C23C16/56 ; C23C16/455 ; H01L21/762 ; H01L21/02

Abstract:
Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.
Public/Granted literature
- US20220189824A1 DEFECT FREE GERMANIUM OXIDE GAP FILL Public/Granted day:2022-06-16
Information query
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