Invention Grant
- Patent Title: Die backend diodes for electrostatic discharge (ESD) protection
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Application No.: US17580787Application Date: 2022-01-21
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Publication No.: US11784181B2Publication Date: 2023-10-10
- Inventor: Aleksandar Aleksov , Adel A. Elsherbini , Feras Eid , Veronica Aleman Strong , Johanna M. Swan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- The original application number of the division: US16724259 2019.12.21
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/528 ; H01L29/24 ; H01L29/861 ; H01L29/47 ; H01L29/872 ; H01L29/45
Abstract:
Embodiments may relate to a die with a front-end and a backend. The front-end may include a transistor. The backend may include a signal line, a conductive line, and a diode that is communicatively coupled with the signal line and the conductive line. Other embodiments may be described or claimed.
Public/Granted literature
- US20220149036A1 DIE BACKEND DIODES FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION Public/Granted day:2022-05-12
Information query
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