Invention Grant
- Patent Title: Lateral bipolar transistor structure with base over semiconductor buffer and related method
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Application No.: US17455290Application Date: 2021-11-17
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Publication No.: US11784224B2Publication Date: 2023-10-10
- Inventor: Hong Yu , Jagar Singh , Zhenyu Hu , John J. Pekarik
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/40 ; H01L29/737 ; H01L29/66 ; H01L29/735 ; H01L29/08

Abstract:
The disclosure provides a lateral bipolar transistor structure with a base layer over a semiconductor buffer, and related methods. A lateral bipolar transistor structure may include an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A semiconductor buffer is adjacent the insulator. A base layer is on the semiconductor buffer and adjacent the E/C layer, the base layer including a lower surface below the E/C layer and an upper surface above the E/C layer. The base layer has a second doping type opposite the first doping type.
Public/Granted literature
- US20230061482A1 LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE OVER SEMICONDUCTOR BUFFER AND RELATED METHOD Public/Granted day:2023-03-02
Information query
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