Invention Grant
- Patent Title: Three dimensionally structured semiconductor light emitting diode and display apparatus
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Application No.: US17022496Application Date: 2020-09-16
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Publication No.: US11784285B2Publication Date: 2023-10-10
- Inventor: Youngjin Choi , Joosung Kim , Jonguk Seo , Sungjin Ahn , Donggun Lee , Jeongwook Lee , Yongseok Choi , Youngjo Tak , Jonghoon Ha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20200013017 2020.02.04
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/38 ; H01L27/15 ; H01L33/42 ; H01L21/02 ; H01L33/12

Abstract:
A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.
Public/Granted literature
- US20210242369A1 THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS Public/Granted day:2021-08-05
Information query
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