Invention Grant
- Patent Title: Memory device sensors
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Application No.: US17892629Application Date: 2022-08-22
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Publication No.: US11789519B2Publication Date: 2023-10-17
- Inventor: Debra M. Bell , Roya Baghi , Erica M. Gove , Zahra Hosseinimakarem , Cheryl M. O'Donnell
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G06F1/3234
- IPC: G06F1/3234 ; G11C16/26 ; G11C11/56

Abstract:
Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.
Public/Granted literature
- US20220404892A1 MEMORY DEVICE SENSORS Public/Granted day:2022-12-22
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