公开(公告)号：US11550687B2

公开(公告)日：2023-01-10

申请号：US16707906

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Cheryl M. O'Donnell ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Debra M. Bell ,  Roya Baghi

IPC: G06F11/30 ,  G06F13/16 ,  G06F11/32 ,  B60H1/00

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

公开(公告)号：US20240036629A1

公开(公告)日：2024-02-01

申请号：US18379440

申请日：2023-10-12

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F1/3275 ,  G11C16/26 ,  G11C11/5642

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US20220404892A1

公开(公告)日：2022-12-22

申请号：US17892629

申请日：2022-08-22

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C16/26 ,  G11C11/56

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US20210173467A1

公开(公告)日：2021-06-10

申请号：US16707488

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C11/56 ,  G11C16/26

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US12298835B2

公开(公告)日：2025-05-13

申请号：US18379440

申请日：2023-10-12

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C11/56 ,  G11C16/26

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US20240411655A1

公开(公告)日：2024-12-12

申请号：US18808825

申请日：2024-08-19

Applicant: Micron Technology, Inc.

Inventor： Cheryl M. O'Donnell ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Debra M. Bell ,  Roya Baghi

IPC: G06F11/30 ,  B60H1/00 ,  G06F11/32 ,  G06F13/16

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

公开(公告)号：US12066916B2

公开(公告)日：2024-08-20

申请号：US18082489

申请日：2022-12-15

Applicant: Micron Technology, Inc.

Inventor： Cheryl M. O'Donnell ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Debra M. Bell ,  Roya Baghi

IPC: G06F11/30 ,  B60H1/00 ,  G06F11/32 ,  G06F13/16

CPC classification number: G06F11/3089 ,  G06F11/3058 ,  G06F11/3075 ,  G06F11/324 ,  G06F13/1668 ,  B60H1/00742

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

公开(公告)号：US11789519B2

公开(公告)日：2023-10-17

申请号：US17892629

申请日：2022-08-22

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F1/3275 ,  G11C11/5642 ,  G11C16/26

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US20230122571A1

公开(公告)日：2023-04-20

申请号：US18082489

申请日：2022-12-15

Applicant: Micron Technology, Inc.

Inventor： Cheryl M. O'Donnell ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Debra M. Bell ,  Roya Baghi

IPC: G06F11/30 ,  G06F13/16 ,  G06F11/32

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

公开(公告)号：US11435811B2

公开(公告)日：2022-09-06

申请号：US16707488

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C16/26 ,  G11C11/56

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.