公开(公告)号：US11735247B2

公开(公告)日：2023-08-22

申请号：US17672537

申请日：2022-02-15

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Debra M. Bell ,  Arunmozhi R. Subramaniam ,  Roya Baghi ,  Deepika Thumsi Umesh ,  Sue-Fern Ng

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4076 ,  G11C11/4074

CPC classification number: G11C11/4085 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/4099

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

公开(公告)号：US11550687B2

公开(公告)日：2023-01-10

申请号：US16707906

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Cheryl M. O'Donnell ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Debra M. Bell ,  Roya Baghi

IPC: G06F11/30 ,  G06F13/16 ,  G06F11/32 ,  B60H1/00

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

公开(公告)号：US20210201981A1

公开(公告)日：2021-07-01

申请号：US17022030

申请日：2020-09-15

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Debra M. Bell ,  Arunmozhi R. Subramaniam ,  Roya Baghi ,  Deepika Thumsi Umesh ,  Sue-Fern Ng

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4074 ,  G11C11/4076

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

公开(公告)号：US20240036629A1

公开(公告)日：2024-02-01

申请号：US18379440

申请日：2023-10-12

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F1/3275 ,  G11C16/26 ,  G11C11/5642

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US11270757B2

公开(公告)日：2022-03-08

申请号：US17022030

申请日：2020-09-15

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Debra M. Bell ,  Arunmozhi R. Subramaniam ,  Roya Baghi ,  Deepika Thumsi Umesh ,  Sue-Fern Ng

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4076 ,  G11C11/4074

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

公开(公告)号：US20220404892A1

公开(公告)日：2022-12-22

申请号：US17892629

申请日：2022-08-22

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C16/26 ,  G11C11/56

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US20210173467A1

公开(公告)日：2021-06-10

申请号：US16707488

申请日：2019-12-09

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C11/56 ,  G11C16/26

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US12298835B2

公开(公告)日：2025-05-13

申请号：US18379440

申请日：2023-10-12

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Roya Baghi ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Cheryl M. O'Donnell

IPC: G06F1/3234 ,  G11C11/56 ,  G11C16/26

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

公开(公告)号：US20240411655A1

公开(公告)日：2024-12-12

申请号：US18808825

申请日：2024-08-19

Applicant: Micron Technology, Inc.

Inventor： Cheryl M. O'Donnell ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Debra M. Bell ,  Roya Baghi

IPC: G06F11/30 ,  B60H1/00 ,  G06F11/32 ,  G06F13/16

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

公开(公告)号：US12066916B2

公开(公告)日：2024-08-20

申请号：US18082489

申请日：2022-12-15

Applicant: Micron Technology, Inc.

Inventor： Cheryl M. O'Donnell ,  Erica M. Gove ,  Zahra Hosseinimakarem ,  Debra M. Bell ,  Roya Baghi

IPC: G06F11/30 ,  B60H1/00 ,  G06F11/32 ,  G06F13/16

CPC classification number: G06F11/3089 ,  G06F11/3058 ,  G06F11/3075 ,  G06F11/324 ,  G06F13/1668 ,  B60H1/00742

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.