Invention Grant
- Patent Title: Apparatus for etching substrate bevel and semiconductor fabrication method using the same
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Application No.: US16855048Application Date: 2020-04-22
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Publication No.: US11791137B2Publication Date: 2023-10-17
- Inventor: Hakseung Lee , Ho-Jin Lee , Dong-Chan Lim , Jinnam Kim , Kwangjin Moon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20190104939 2019.08.27
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67

Abstract:
A bevel etching apparatus includes a chuck plate that is configured to receive a substrate, a lower ring surrounding a circumference of the chuck plate, a cover plate on the chuck plate, and an upper ring surrounding a circumference of the cover plate. The lower ring includes a ring base and a protrusion that extends upwardly from an edge of the ring base and surrounds a lower portion of a sidewall of the substrate.
Public/Granted literature
- US20210066386A1 APPARATUS FOR ETCHING SUBSTRATE BEVEL AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME Public/Granted day:2021-03-04
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