公开(公告)号：US20230352410A1

公开(公告)日：2023-11-02

申请号：US18347512

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinnam Kim ,  Kwangjin Moon ,  Hojin Lee ,  Pilkyu Kang ,  Hoonjoo Na

IPC: H01L23/535 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L21/768 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485

CPC classification number: H01L23/535 ,  H01L29/7851 ,  H01L29/0847 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/66795 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5286 ,  H01L23/485

Abstract: A semiconductor device includes a substrate having a first and second surface opposite to each other, and an active region on the first surface and defined by a first isolation region; a plurality of active fins on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.

公开(公告)号：US20220013503A1

公开(公告)日：2022-01-13

申请号：US17209801

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsuk Jung ,  Hyoukyung Cho ,  Jinnam Kim ,  Hyungjun Jeon ,  Kwangjin Moon ,  Hoonjoo Na ,  Hakseung Lee

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor package includes first to fourth semiconductor chips sequentially stacked on one another. A backside of a third substrate of the third semiconductor chip may be arranged to face a backside surface of a second substrate of the second semiconductor chip such that the third substrate and a second backside insulation layer provided on the backside surface of the second substrate are bonded directly to each other, or the backside of the third substrate may be arranged to face a front surface of the second substrate such that the third substrate and a second front insulation layer provided on the front surface of the second substrate are bonded directly to each other.

公开(公告)号：US20210375722A1

公开(公告)日：2021-12-02

申请号：US17147927

申请日：2021-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinnam Kim ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a first surface on which an active region is disposed, and a second surface opposite the first surface, a buried conductive line extending in one direction and having a portion buried in the active region, an insulating portion covering the buried conductive line, a contact structure disposed on the insulating portion and connected to the buried conductive line, a through-hole extending from the second surface to the insulating portion and exposing the buried portion of the buried conductive line, an insulating isolation film disposed on a side surface of the buried conductive line and exposing a bottom surface of the buried portion and a side surface adjacent to the bottom surface, a through-via contacting the bottom surface and the adjacent side surface of the buried conductive line, an insulating liner surrounding the through-via.

公开(公告)号：USD854765S1

公开(公告)日：2019-07-23

申请号：US29669809

申请日：2018-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Jinnam Kim

公开(公告)号：USD821045S1

公开(公告)日：2018-06-19

申请号：US29588380

申请日：2016-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Jinnam Kim ,  Kyoungmin Lee

公开(公告)号：USD753353S1

公开(公告)日：2016-04-05

申请号：US29523946

申请日：2015-04-15

Applicant: Samsung Electronics Co., Ltd.

Designer： Kang-Doo Kim ,  Jinnam Kim ,  Sungjae Lee ,  Chris Bangle

公开(公告)号：USD730596S1

公开(公告)日：2015-05-26

申请号：US29483018

申请日：2014-02-25

Applicant: Samsung Electronics Co., Ltd.

Designer： Kang-Doo Kim ,  Jinnam Kim ,  Sungjae Lee ,  Chris Bangle

公开(公告)号：USD1046329S1

公开(公告)日：2024-10-08

申请号：US29888934

申请日：2023-04-06

Applicant: Samsung Electronics Co., Ltd.

Designer： Jinnam Kim ,  Sujin Oh

Abstract: FIG. 1 is a front perspective view of a washing machine, showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.
The broken lines in the figures depict portions of a washing machine that form no part of the claimed design.

公开(公告)号：US20220336330A1

公开(公告)日：2022-10-20

申请号：US17855902

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinnam Kim ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having a first surface on which an active region is disposed, and a second surface opposite the first surface, a buried conductive line extending in one direction and having a portion buried in the active region, an insulating portion covering the buried conductive line, a contact structure disposed on the insulating portion and connected to the buried conductive line, a through-hole extending from the second surface to the insulating portion and exposing the buried portion of the buried conductive line, an insulating isolation film disposed on a side surface of the buried conductive line and exposing a bottom surface of the buried portion and a side surface adjacent to the bottom surface, a through-via contacting the bottom surface and the adjacent side surface of the buried conductive line, an insulating liner surrounding the through-via.

公开(公告)号：USD941537S1

公开(公告)日：2022-01-18

申请号：US29727299

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Designer： Jinnam Kim