Invention Grant
- Patent Title: Semiconductor assemblies including thermal circuits and methods of manufacturing the same
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Application No.: US17520568Application Date: 2021-11-05
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Publication No.: US11791315B2Publication Date: 2023-10-17
- Inventor: Chan H. Yoo , Owen R. Fay , Eiichi Nakano
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/373 ; H01L23/498 ; H01L23/00 ; H05K1/02

Abstract:
Semiconductor assemblies including thermal layers and associated systems and methods are disclosed herein. In some embodiments, the semiconductor assemblies comprise one or more semiconductor devices over a substrate. The substrate includes a thermal layer configured to transfer thermal energy across the substrate. The thermal energy is transferred from the semiconductor device to the graphene layer using one or more thermal connectors.
Public/Granted literature
- US20220059508A1 SEMICONDUCTOR ASSEMBLIES INCLUDING THERMAL CIRCUITS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2022-02-24
Information query
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