In some embodiments, the present disclosure relates to a transistor device. The transistor device that includes a source contact disposed over a substrate. The source contact has a first side and an opposing second side disposed between a first end and an opposing second end. A drain contact is disposed over the substrate and is separated from the source contact along a first direction. A gate structure is disposed over the substrate between the source contact and the drain contact. The gate structure extends along the first side of the source contact facing the drain contact and also wraps around the first end and the opposing second end of the source contact.