Invention Grant
- Patent Title: Method for manufacturing thin film transistor, and electronic device
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Application No.: US17859946Application Date: 2022-07-07
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Publication No.: US11791418B2Publication Date: 2023-10-17
- Inventor: SeungJin Kim , HeeSung Lee , Sohyung Lee , MinCheol Kim , JeongSuk Yang , JeeHo Park , Seoyeon Im
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Seed IP Law Group LLP
- Priority: KR 20170068037 2017.05.31 KR 20170169420 2017.12.11
- The original application number of the division: US15994765 2018.05.31
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/24 ; G09G3/3266 ; H01L29/66 ; H01L29/417 ; G09G3/3291

Abstract:
Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.
Public/Granted literature
- US20220344512A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE Public/Granted day:2022-10-27
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