公开(公告)号：US12249655B2

公开(公告)日：2025-03-11

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11791418B2

公开(公告)日：2023-10-17

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

CPC classification number: H01L29/7869 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0245 ,  G09G2310/08

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11417774B2

公开(公告)日：2022-08-16

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11201248B2

公开(公告)日：2021-12-14

申请号：US16790591

申请日：2020-02-13

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  G02F1/1333

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US11011650B2

公开(公告)日：2021-05-18

申请号：US16058737

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： Seoyeon Im ,  HeeSung Lee ,  SeungJin Kim ,  SungKi Kim

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/385 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/04 ,  H01L51/00 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.

公开(公告)号：US10930790B2

公开(公告)日：2021-02-23

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US10608117B2

公开(公告)日：2020-03-31

申请号：US16019294

申请日：2018-06-26

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  G02F1/1333

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US12176437B2

公开(公告)日：2024-12-24

申请号：US17524255

申请日：2021-11-11

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38 ,  G02F1/1333

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US12048194B2

公开(公告)日：2024-07-23

申请号：US18151849

申请日：2023-01-09

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  Sohyung Lee

IPC: H01L29/786 ,  H10K59/12

CPC classification number: H10K59/12 ,  H01L29/78618 ,  H01L29/7869

Abstract: Disclosed is a display apparatus including a first thin film transistor (TFT) and a second thin film transistor having a bottom gate structure and including an oxide semiconductor layer. The first TFT may be used as a switching device and the second TFT may be used as a driving device, and these TFTs have different operation properties from each other. One or more embodiments of the present disclosure provides a method of arranging a plurality of TFTs having different properties in a display apparatus. This not only provides a display apparatus with TFTs integrated at a high density but also an efficient way of driving the display apparatus.

公开(公告)号：US11587992B2

公开(公告)日：2023-02-21

申请号：US17116800

申请日：2020-12-09

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  Sohyung Lee

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786

Abstract: Disclosed is a display apparatus including a first thin film transistor (TFT) and a second thin film transistor having a bottom gate structure and including an oxide semiconductor layer. The first TFT may be used as a switching device and the second TFT may be used as a driving device, and these TFTs have different operation properties from each other. One or more embodiments of the present disclosure provides a method of arranging a plurality of TFTs having different properties in a display apparatus. This not only provides a display apparatus with TFTs integrated at a high density but also an efficient way of driving the display apparatus.