- Patent Title: Polishing slurry and method of manufacturing semiconductor device
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Application No.: US17676928Application Date: 2022-02-22
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Publication No.: US11795347B2Publication Date: 2023-10-24
- Inventor: Kenji Takai , Eigo Miyazaki , Do Yoon Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: CANTOR COLBURN LLP
- Priority: KR 20190028738 2019.03.13
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/321 ; H01L21/768
Abstract:
A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.
Public/Granted literature
- US20220177728A1 POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-06-09
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