Invention Grant
- Patent Title: Apparatus and methods for determining memory cell data states
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Application No.: US17681976Application Date: 2022-02-28
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Publication No.: US11798647B2Publication Date: 2023-10-24
- Inventor: Sheyang Ning , Lawrence Celso Miranda , Tomoko Ogura Iwasaki , Ting Luo , Luyen Vu
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C29/42
- IPC: G11C29/42 ; G11C29/44 ; G11C7/10 ; G11C29/12

Abstract:
Apparatus might include an array of memory cells and a controller for access of the array of memory cells. The controller might be configured to cause the apparatus to apply a sense voltage level to a control gate of a memory cell of the array of memory cells, generate N determinations whether the memory cell is deemed to activate or deactivate while applying the sense voltage level, wherein N is an integer value greater than or equal to three, deem the memory cell to have a threshold voltage in a first range of threshold voltages lower than the sense voltage level in response to a majority of the N determinations indicating activation of the memory cell, and deem the memory cell to have a threshold voltage in a second range of threshold voltages higher than the sense voltage level in response to a majority of the N determinations indicating activation of the memory cell.
Public/Granted literature
- US20230274786A1 APPARATUS AND METHODS FOR DETERMINING MEMORY CELL DATA STATES Public/Granted day:2023-08-31
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