- Patent Title: Hollow cathode, an apparatus including a hollow cathode for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using a hollow cathode
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Application No.: US17091433Application Date: 2020-11-06
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Publication No.: US11798788B2Publication Date: 2023-10-24
- Inventor: Sang Ki Nam , Sunggil Kang , Sungyong Lim , Beomjin Yoo , Akira Koshiishi , Vasily Pashkovskiy , Kwangyoub Heo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20170137420 2017.10.23
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32 ; H01J1/02

Abstract:
A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
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