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1.发明授权公开(公告)号：US11348760B2
公开(公告)日：2022-05-31
申请号：US16915437
申请日：2020-06-29
发明人： Akira Koshiishi , Masato Horiguchi , Yongwoo Lee , Kyohyeok Kim , Dowon Kim , Yunhwan Kim , Youngjin Noh , Jongwoo Sun , Taeil Cho
IPC分类号： H01J37/32 , H01L21/683
摘要： A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.
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公开(公告)号：US11195696B2
公开(公告)日：2021-12-07
申请号：US16850252
申请日：2020-04-16
发明人： Dongkyu Shin , Sangki Nam , Soonam Park , Akira Koshiishi , Kyuhee Han
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683 , H01L21/3065 , H01J37/063
摘要： An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.
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公开(公告)号：US20190122867A1
公开(公告)日：2019-04-25
申请号：US15991500
申请日：2018-05-29
发明人： Sang Ki Nam , Sunggil Kang , Sungyong Lim , Beomjin Yoo , Akira Koshiishi , Vasily Pashkovskiy , Kwangyoub Heo
摘要： A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
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公开(公告)号：US11798788B2
公开(公告)日：2023-10-24
申请号：US17091433
申请日：2020-11-06
发明人： Sang Ki Nam , Sunggil Kang , Sungyong Lim , Beomjin Yoo , Akira Koshiishi , Vasily Pashkovskiy , Kwangyoub Heo
IPC分类号： H01L21/3065 , H01J37/32 , H01J1/02
CPC分类号： H01J37/32596 , H01J1/025 , H01J37/32009 , H01J37/32899
摘要： A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
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5.发明授权公开(公告)号：US10950414B2
公开(公告)日：2021-03-16
申请号：US15983178
申请日：2018-05-18
发明人： Sang Ki Nam , Akira Koshiishi , Kwangyoub Heo , Sunggil Kang , Beomjin Yoo , Sungyong Lim , Vasily Pashkovskiy
IPC分类号： H01L21/00 , C23C16/00 , H01J37/32 , H01L21/66 , H01L21/3065 , H01L21/683
摘要： Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.
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