Invention Grant
- Patent Title: Selective removal of ruthenium-containing materials
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Application No.: US17240149Application Date: 2021-04-26
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Publication No.: US11798813B2Publication Date: 2023-10-24
- Inventor: Baiwei Wang , Xiaolin C. Chen , Rohan Puligoru Reddy , Oliver Jan , Zhenjiang Cui , Anchuan Wang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/306 ; C23F4/02 ; H01L21/02 ; H01L21/3065 ; H01L21/311
Abstract:
Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.
Public/Granted literature
- US20220344172A1 SELECTIVE REMOVAL OF RUTHENIUM-CONTAINING MATERIALS Public/Granted day:2022-10-27
Information query
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