- 专利标题: Quantum dot, method of preparing quantum dot, optical member including quantum dot, and electronic device including quantum dot
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申请号: US17203538申请日: 2021-03-16
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公开(公告)号: US11802239B2公开(公告)日: 2023-10-31
- 发明人: Yunhyuk Ko , Heesun Yang , Changhee Lee , Kyunghye Kim , Sungwoon Kim , Jungho Jo
- 申请人: Samsung Display Co., Ltd. , Hongik University Industry-Academia Cooperation Foundation
- 申请人地址: KR Yongin-si
- 专利权人: SAMSUNG DISPLAY CO., LTD.,HONGIK UNIVERSITY INDUSTRY-ACADEMIA COOPERATION FOUNDATION
- 当前专利权人: SAMSUNG DISPLAY CO., LTD.,HONGIK UNIVERSITY INDUSTRY-ACADEMIA COOPERATION FOUNDATION
- 当前专利权人地址: KR Yongin-si; KR Seoul
- 代理机构: KILE PARK REED & HOUTTEMAN PLLC
- 优先权: KR 20200039263 2020.03.21 KR 20210001472 2021.01.06
- 主分类号: C09K11/62
- IPC分类号: C09K11/62 ; C09K11/70 ; C09K11/08 ; C09K11/56 ; C01G15/00 ; H05B33/14 ; C01G9/08 ; C01B19/04 ; H10K50/115 ; B82Y20/00 ; B82Y30/00 ; B82Y40/00 ; H10K102/00
摘要:
Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A1, and A2; and a shell covering the core. A1 is a Group V element, A2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A2, and includes indium and A1, and the second region includes indium, A1, and A2, and indium and A2 are alloyed with each other in the second region.
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