Invention Grant
- Patent Title: Integrated circuit chip including standard cell
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Application No.: US17527432Application Date: 2021-11-16
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Publication No.: US11804480B2Publication Date: 2023-10-31
- Inventor: Panjae Park , Byungju Kang , Yoonjeong Kim , Kwanyoung Chun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20210067361 2021.05.26
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/092 ; H01L27/118 ; H01L29/08 ; H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L21/8238 ; H01L29/775 ; H01L29/786 ; H01L23/528 ; B82Y10/00

Abstract:
An integrated circuit chip including a substrate including first and second element regions; a first channel active region extending in a first direction; a second channel active region; gate lines extending in a second direction and intersecting the first and second channel active regions; a diffusion break extending in the second direction; source/drain regions at opposite sides of the gate lines and on the first and second channel active regions; a first power line electrically connected to the source/drain regions; and a second power line electrically connected to the source/drain regions and having a lower voltage level than the first power line, wherein the diffusion break includes a first region including an insulator and overlapping the first element region, and a second region including a same material as the gate lines and overlapping the second element region, wherein the second region is electrically connected to the second power line.
Public/Granted literature
- US20220384415A1 INTEGRATED CIRCUIT CHIP INCLUDING STANDARD CELL Public/Granted day:2022-12-01
Information query
IPC分类: