公开(公告)号：US11804480B2

公开(公告)日：2023-10-31

申请号：US17527432

申请日：2021-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Panjae Park ,  Byungju Kang ,  Yoonjeong Kim ,  Kwanyoung Chun

IPC: H01L27/02 ,  H01L27/092 ,  H01L27/118 ,  H01L29/08 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/775 ,  H01L29/786 ,  H01L23/528 ,  B82Y10/00

CPC classification number: H01L27/0207 ,  H01L27/092 ,  H01L27/11807 ,  H01L29/0847 ,  H01L2027/11875 ,  H01L2027/11881

Abstract: An integrated circuit chip including a substrate including first and second element regions; a first channel active region extending in a first direction; a second channel active region; gate lines extending in a second direction and intersecting the first and second channel active regions; a diffusion break extending in the second direction; source/drain regions at opposite sides of the gate lines and on the first and second channel active regions; a first power line electrically connected to the source/drain regions; and a second power line electrically connected to the source/drain regions and having a lower voltage level than the first power line, wherein the diffusion break includes a first region including an insulator and overlapping the first element region, and a second region including a same material as the gate lines and overlapping the second element region, wherein the second region is electrically connected to the second power line.

公开(公告)号：USD781316S1

公开(公告)日：2017-03-14

申请号：US29480856

申请日：2014-01-30

Applicant: Samsung Electronics Co., Ltd.

Designer： Yoonjeong Kim