Invention Grant
- Patent Title: Annular bipolar transistors
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Application No.: US17557176Application Date: 2021-12-21
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Publication No.: US11804542B2Publication Date: 2023-10-31
- Inventor: Alexander M. Derrickson , Arkadiusz Malinowski , Jagar Singh , Mankyu Yang , Judson R. Holt
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US NY Malta
- Agency: Calderon Safran & Cole P.C.
- Agent Francois Pagette; Andrew M. Calderon
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/165 ; H01L29/66 ; H01L29/10 ; H01L29/08
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to annular bipolar transistors and methods of manufacture. The structure includes: a substate material; a collector region parallel to and above the substrate material; an intrinsic base region surrounding the collector region; an emitter region above the intrinsic base region; and an extrinsic base region contacting the intrinsic base region.
Public/Granted literature
- US20230063301A1 ANNULAR BIPOLAR TRANSISTORS Public/Granted day:2023-03-02
Information query
IPC分类:
