Invention Grant
- Patent Title: Magnetoresistive random access memory and method for fabricating the same
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Application No.: US16927918Application Date: 2020-07-13
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Publication No.: US11821964B2Publication Date: 2023-11-21
- Inventor: Hui-Lin Wang , Chen-Yi Weng , Che-Wei Chang , Si-Han Tsai , Ching-Hua Hsu , Jing-Yin Jhang , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2010546950.X 2020.06.16
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G11C11/02 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/80 ; H10N50/85
Abstract:
A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.
Public/Granted literature
- US20210389394A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-12-16
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