- 专利标题: Semiconductor device with pad structure and method for fabricating the same
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申请号: US17484988申请日: 2021-09-24
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公开(公告)号: US11832439B2公开(公告)日: 2023-11-28
- 发明人: Tsu-Chieh Ai
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei
- 代理商 Xuan Zhang
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H10B12/00
摘要:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a pad structure positioned above the substrate and including a bottom portion and two side portions, wherein the bottom portion is positioned parallel to a top surface of the substrate, and the two side portions are positioned on two sides of the bottom portion and extending along a direction parallel to a normal of the top surface of the substrate; and an insulator film surrounding the pad structure. A top surface of the insulator film is at a vertical level greater than a vertical level of a top surface of the pad structure.
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