公开(公告)号：US11823992B2

公开(公告)日：2023-11-21

申请号：US17484485

申请日：2021-09-24

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Tsu-Chieh Ai

IPC分类号： H01L21/768 ,  H01L23/498

CPC分类号： H01L23/49838 ,  H01L21/76838

摘要： The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a bottom conductive layer positioned on the substrate; at least one bottom conductive protrusion positioned on the bottom conductive layer; an insulator layer positioned on the bottom conductive layer and the at least one bottom conductive protrusion; at least one bottom insulating protrusion protruding from the insulator layer towards the bottom conductive layer and adjacent to the at least one bottom conductive protrusion; and a top conductive layer positioned on the insulator layer. The bottom conductive layer, the at least one bottom conductive protrusion, the insulator layer, the at least one bottom insulating protrusion, and the top conductive layer together configure a capacitor structure.

公开(公告)号：US12100650B2

公开(公告)日：2024-09-24

申请号：US17491716

申请日：2021-10-01

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Tsu-Chieh Ai

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76877 ,  H01L23/5329

摘要： An interconnection structure and a method of manufacturing an interconnection structure are provided. The interconnection structure includes a first dielectric layer, a first conductive via in the first dielectric layer, and a first metal line disposed on the first dielectric layer and electrically connected with the first conductive via. At least a portion of the first metal line is exposed to a first air gap.

公开(公告)号：US11877436B2

公开(公告)日：2024-01-16

申请号：US17486402

申请日：2021-09-27

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Tsu-Chieh Ai

IPC分类号： H01L27/108 ,  H10B12/00 ,  H01L23/00 ,  H01L29/417

CPC分类号： H10B12/31 ,  H01L23/564 ,  H01L29/41725 ,  H10B12/033

摘要： A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate and a conductive pad disposed on the substrate and having a first surface facing away from the substrate. The first surface of the conductive pad is recessed toward the substrate and defines a recessed portion. The semiconductor device also includes a capacitor structure at least partially-disposed within the recessed portion of the conductive pad and electrically connected with the substrate through the conductive pad.

公开(公告)号：US11832439B2

公开(公告)日：2023-11-28

申请号：US17484988

申请日：2021-09-24

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Tsu-Chieh Ai

IPC分类号： H01L27/108 ,  H10B12/00

CPC分类号： H10B12/315 ,  H10B12/0335 ,  H10B12/053 ,  H10B12/34 ,  H10B12/482

摘要： The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a pad structure positioned above the substrate and including a bottom portion and two side portions, wherein the bottom portion is positioned parallel to a top surface of the substrate, and the two side portions are positioned on two sides of the bottom portion and extending along a direction parallel to a normal of the top surface of the substrate; and an insulator film surrounding the pad structure. A top surface of the insulator film is at a vertical level greater than a vertical level of a top surface of the pad structure.