Invention Grant
- Patent Title: Memory device for adjusting memory capacity per channel and memory system including the same
-
Application No.: US17229198Application Date: 2021-04-13
-
Publication No.: US11836097B2Publication Date: 2023-12-05
- Inventor: Jae-Won Park , Je-Min Ryu , Sang-Hoon Shin , Jae-Hoon Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20180017953 2018.02.13
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F12/06 ; G06F12/0866

Abstract:
A memory device includes a first channel including a first cell array and communicating with a memory controller through a first path, a second channel including a second cell array and communicating with the memory controller through a second path, and an assignment control circuit configured to monitor memory usage of the first and second channels and further assign a storage space of a portion of the second cell array to the first channel when the memory usage of the first cell array exceeds a threshold value. Access to the storage space of the portion of the second cell array assigned to the first channel is performed through the first path.
Public/Granted literature
- US20210232513A1 MEMORY DEVICE FOR ADJUSTING MEMORY CAPACITY PER CHANNEL AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2021-07-29
Information query