Invention Grant
- Patent Title: Methods of cutting a fine pattern, methods of forming active patterns using the same, and methods of manufacturing a semiconductor device using the same
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Application No.: US17022208Application Date: 2020-09-16
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Publication No.: US11842899B2Publication Date: 2023-12-12
- Inventor: Sanggyo Chung , Jiseung Lee , Kyoungha Eom , Hyunchul Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Fish & Richardson P.C.
- Priority: KR 20200002968 2020.01.09
- Main IPC: H01L21/308
- IPC: H01L21/308 ; C23C16/455 ; C23C16/56 ; C23C16/40 ; H01L21/3065 ; H10B12/00
Abstract:
In a method of cutting a fine pattern, a line structure is formed on a substrate. The line structure extends in a first direction, and includes a pattern and a first mask. The pattern and the first mask include different materials. A sacrificial layer is formed on the substrate to cover the line structure. The sacrificial layer is partially etched to form a first opening partially overlapping the line structure in a vertical direction. A portion of the first mask, an upper portion of the pattern and/or a portion of the sacrificial layer under the first opening are partially etched using an etching gas having no etching selectivity among the pattern, the first mask and the sacrificial layer. A lower portion of the pattern under the upper portion thereof is removed to divide the pattern into a plurality of pieces spaced apart from each other in the first direction.
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