公开(公告)号：US11842899B2

公开(公告)日：2023-12-12

申请号：US17022208

申请日：2020-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanggyo Chung ,  Jiseung Lee ,  Kyoungha Eom ,  Hyunchul Lee

IPC: H01L21/308 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  H01L21/3065 ,  H10B12/00

CPC classification number: H01L21/3088 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H10B12/0335 ,  H10B12/053 ,  H10B12/315 ,  H10B12/34 ,  H10B12/482

Abstract: In a method of cutting a fine pattern, a line structure is formed on a substrate. The line structure extends in a first direction, and includes a pattern and a first mask. The pattern and the first mask include different materials. A sacrificial layer is formed on the substrate to cover the line structure. The sacrificial layer is partially etched to form a first opening partially overlapping the line structure in a vertical direction. A portion of the first mask, an upper portion of the pattern and/or a portion of the sacrificial layer under the first opening are partially etched using an etching gas having no etching selectivity among the pattern, the first mask and the sacrificial layer. A lower portion of the pattern under the upper portion thereof is removed to divide the pattern into a plurality of pieces spaced apart from each other in the first direction.

公开(公告)号：US20240063024A1

公开(公告)日：2024-02-22

申请号：US18497172

申请日：2023-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanggyo Chung ,  Jiseung Lee ,  Kyoungha Eom ,  Hyunchul Lee

IPC: H01L21/308 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  H01L21/3065 ,  H10B12/00

CPC classification number: H01L21/3088 ,  C23C16/45525 ,  C23C16/56 ,  C23C16/401 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3085 ,  H10B12/34 ,  H10B12/053 ,  H10B12/315 ,  H10B12/0335 ,  H10B12/482

Abstract: In a method of cutting a fine pattern, a line structure is formed on a substrate. The line structure extends in a first direction, and includes a pattern and a first mask. The pattern and the first mask include different materials. A sacrificial layer is formed on the substrate to cover the line structure. The sacrificial layer is partially etched to form a first opening partially overlapping the line structure in a vertical direction. A portion of the first mask, an upper portion of the pattern and/or a portion of the sacrificial layer under the first opening are partially etched using an etching gas having no etching selectivity among the pattern, the first mask and the sacrificial layer. A lower portion of the pattern under the upper portion thereof is removed to divide the pattern into a plurality of pieces spaced apart from each other in the first direction.

公开(公告)号：US12293921B2

公开(公告)日：2025-05-06

申请号：US18497172

申请日：2023-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanggyo Chung ,  Jiseung Lee ,  Kyoungha Eom ,  Hyunchul Lee

IPC: H01L21/308 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/3065 ,  H10B12/00

Abstract: In a method of cutting a fine pattern, a line structure is formed on a substrate. The line structure extends in a first direction, and includes a pattern and a first mask. The pattern and the first mask include different materials. A sacrificial layer is formed on the substrate to cover the line structure. The sacrificial layer is partially etched to form a first opening partially overlapping the line structure in a vertical direction. A portion of the first mask, an upper portion of the pattern and/or a portion of the sacrificial layer under the first opening are partially etched using an etching gas having no etching selectivity among the pattern, the first mask and the sacrificial layer. A lower portion of the pattern under the upper portion thereof is removed to divide the pattern into a plurality of pieces spaced apart from each other in the first direction.

公开(公告)号：US20210217625A1

公开(公告)日：2021-07-15

申请号：US17022208

申请日：2020-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanggyo Chung ,  Jiseung Lee ,  Kyoungha Eom ,  Hyunchul Lee

IPC: H01L21/308 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  H01L21/3065 ,  H01L27/108

Abstract: In a method of cutting a fine pattern, a line structure is formed on a substrate. The line structure extends in a first direction, and includes a pattern and a first mask. The pattern and the first mask include different materials. A sacrificial layer is formed on the substrate to cover the line structure. The sacrificial layer is partially etched to form a first opening partially overlapping the line structure in a vertical direction. A portion of the first mask, an upper portion of the pattern and/or a portion of the sacrificial layer under the first opening are partially etched using an etching gas having no etching selectivity among the pattern, the first mask and the sacrificial layer. A lower portion of the pattern under the upper portion thereof is removed to divide the pattern into a plurality of pieces spaced apart from each other in the first direction.